تقرير
Polarization and resistive switching in epitaxial 2 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ tunnel junctions
| العنوان: | Polarization and resistive switching in epitaxial 2 nm Hf$_{0.5}$Zr$_{0.5}$O$_2$ tunnel junctions |
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| المؤلفون: | Sulzbach, Milena Cervo, Tan, Huan, Estandia, Saul, Gazquez, Jaume, Sanchez, Florencio, Fina, Ignasi, Fontcuberta, Josep |
| المصدر: | ACS Appl. Electron. Mater. 2021 |
| سنة النشر: | 2021 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Physics - Applied Physics, Condensed Matter - Materials Science |
| الوصف: | In the quest for reliable and power-efficient memristive devices, ferroelectric tunnel junctions are being investigated as potential candidates. CMOS-compatible ferroelectric hafnium oxides are at the forefront. However, in epitaxial tunnel devices with thicknesses around ${\approx}$ 4 - 6 nm, the relatively high tunnel energy barrier produces a large resistance that challenges their implementation. Here, we show that ferroelectric and electroresistive switching can be observed in ultrathin 2 nm epitaxial Hf$_{0.5}$Zr$_{0.5}$O$_2$ (HZO) tunnel junctions in large area capacitors (${\approx} 300{\mu}m^2$). We observe that the resistance area product is reduced to about 160 ${\Omega}{\cdot}$cm$^2$ and 65 ${\Omega}{\cdot}$cm$^2$ for OFF and ON resistance states, respectively. These values are two orders of magnitude smaller than those obtained in equivalent 5 nm HZO tunnel devices while preserving a similar OFF/ON resistance ratio (210 ${\%}$). The devices show memristive and spike-timing-dependent plasticity (STDP) behavior and good retention. Electroresistance and ferroelectric loops closely coincide, signaling ferroelectric switching as a driving mechanism for resistance change. |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1021/acsaelm.1c00604 |
| URL الوصول: | http://arxiv.org/abs/2108.10373 |
| رقم الأكسشن: | edsarx.2108.10373 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1021/acsaelm.1c00604 |
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