Cu doping effects on the electronic structure of Fe1-xCuxSe

التفاصيل البيبلوغرافية
العنوان: Cu doping effects on the electronic structure of Fe1-xCuxSe
المؤلفون: Huh, Soonsang, Lu, Zouyouwei, Kim, Youn Sik, Kim, Donghan, Liu, Shaobo, Ma, Mingwei, Yu, Li, Zhou, Fang, Dong, Xiaoli, Kim, Changyoung, Zhao, Zhongxian
سنة النشر: 2021
مصطلحات موضوعية: Condensed Matter - Superconductivity
الوصف: Using angle-resolved photoemission spectroscopy (ARPES), we studied the evolution of the electronic structure of Fe1-xCuxSe from x = 0 to 0.10. We found that the Cu dopant introduces extra electron carriers. The hole bands near the gamma point are observed to steadily shift downward with increasing doping and completely sink down below the Fermi level (EF) for x > 0.05. Meanwhile, the electron pocket near the M point becomes larger but loses the spectral weight near EF. We also observed that effective mass of the electron band near the M point increases with doping. Our result explains why superconductivity disappears and metal insulator transition (MIT) like behavior occurs upon Cu doping in terms of electronic structure, and provide insight into emergent magnetic fluctuation in Fe1-xCuxSe.
نوع الوثيقة: Working Paper
DOI: 10.1103/PhysRevB.105.245140
URL الوصول: http://arxiv.org/abs/2110.14463
رقم الأكسشن: edsarx.2110.14463
قاعدة البيانات: arXiv
الوصف
DOI:10.1103/PhysRevB.105.245140