تقرير
Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions
| العنوان: | Gate-controlled Supercurrent in Ballistic InSb Nanoflag Josephson Junctions |
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| المؤلفون: | Salimian, Sedighe, Carrega, Matteo, Verma, Isha, Zannier, Valentina, Nowak, Michal P., Beltram, Fabio, Sorba, Lucia, Heun, Stefan |
| المصدر: | Appl. Phys. Lett. 119, 214004 (2021) |
| سنة النشر: | 2021 |
| المجموعة: | Condensed Matter Physics (Other) Quantum Physics |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science, Condensed Matter - Superconductivity, Physics - Applied Physics, Quantum Physics |
| الوصف: | High-quality III-V narrow band gap semiconductor materials with strong spin-orbit coupling and large Lande g-factor provide a promising platform for next-generation applications in the field of high-speed electronics, spintronics, and quantum computing. Indium Antimonide (InSb) offers a narrow band gap, high carrier mobility, and a small effective mass, and thus is very appealing in this context. In fact, this material has attracted tremendous attention in recent years for the implementation of topological superconducting states supporting Majorana zero modes. However, high-quality heteroepitaxial two-dimensional (2D) InSb layers are very diffcult to realize owing to the large lattice mismatch with all commonly available semiconductor substrates. An alternative pathway is the growth of free-standing single-crystalline 2D InSb nanostructures, the so-called nanoflags. Here we demonstrate fabrication of ballistic Josephson-junction devices based on InSb nanoflags with Ti/Nb contacts that show gate-tunable proximity-induced supercurrent up to 50 nA at 250 mK and a sizable excess current. The devices show clear signatures of subharmonic gap structures, indicating phase-coherent transport in the junction and a high transparency of the interfaces. This places InSb nanoflags in the spotlight as a versatile and convenient 2D platform for advanced quantum technologies. |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1063/5.0071218 |
| URL الوصول: | http://arxiv.org/abs/2111.01695 |
| رقم الأكسشن: | edsarx.2111.01695 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1063/5.0071218 |
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