تقرير
Engineering single donor detectors in doped silicon
| العنوان: | Engineering single donor detectors in doped silicon |
|---|---|
| المؤلفون: | Lasek, A. A., Barnes, C. H. W., Ferrus, T. |
| سنة النشر: | 2021 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | We demonstrate the possibility of engineering a single donor transistor directly from a phosphorous doped quantum dot by making use of the intrinsic glassy behaviour of the structure as well as the complex electron dynamics during cooldown. Characterisation of the device at low temperatures and in magnetic field shows single donors can be electrostatically isolated near one of the tunnel barrier with either a single or a doubly occupancy. Such a model is well supported by capacitance-based simulations. Ability of using the D0 of such isolated donor as a charge detector is demonstrated by observing the charge stability diagram of a nearby and capacitively coupled semi-connected double quantum dot. Comment: 10 pages, supplementary information available on demand, new version as accepted for publication in PRB |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2111.10907 |
| رقم الأكسشن: | edsarx.2111.10907 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |