تقرير
Gate tuning of fractional quantum Hall states in InAs two-dimensional electron gas
| العنوان: | Gate tuning of fractional quantum Hall states in InAs two-dimensional electron gas |
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| المؤلفون: | Komatsu, S., Irie, H., Akiho, T., Nojima, T., Akazaki, T., Muraki, K. |
| المصدر: | Phys. Rev. B 105, 075305 (2022) |
| سنة النشر: | 2021 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science |
| الوصف: | We report the observation of fractional quantum Hall (FQH) effects in a two-dimensional electron gas (2DEG) confined to an InAs/AlGaSb quantum well, using a dual-gated Hall-bar device allowing for the independent control of the vertical electric field and electron density. At a magnetic field of 24 T, we observe FQH states at several filling factors, namely $\nu = 5/3$, $2/3$, and $1/3$, in addition to the $\nu = 4/3$ previously reported for an InAs 2DEG. The $\nu = 4/3$ and $5/3$ states, which are absent at zero back-gate voltage, emerge as the quantum well is made more symmetric by applying a positive back-gate voltage. The dependence of zero-field electron mobility on the quantum-well asymmetry reveals a significant contribution of interface-roughness scattering, with much stronger scattering at the lower InAs/AlGaSb interface. However, the dependence of the visibility of the FQH effects on the quantum-well asymmetry is not entirely consistent with that of mobility, suggesting that a different source of disorder is also at work. Comment: 5 pages, 4 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1103/PhysRevB.105.075305 |
| URL الوصول: | http://arxiv.org/abs/2112.05384 |
| رقم الأكسشن: | edsarx.2112.05384 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1103/PhysRevB.105.075305 |
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