Highly-directional, highly-efficient solution-processed light-emitting diodes of all-face-down oriented colloidal quantum wells

التفاصيل البيبلوغرافية
العنوان: Highly-directional, highly-efficient solution-processed light-emitting diodes of all-face-down oriented colloidal quantum wells
المؤلفون: Baruj, Hamed Dehghanpour, Yurdakul, Iklim, Canimkurbey, Betul, Isik, Ahmet Tarik, Shabani, Farzan, Delikanli, Savas, Shendre, Sushant, Erdem, Onur, Isik, Furkan, Demir, Hilmi Volkan
سنة النشر: 2022
المجموعة: Condensed Matter
Physics (Other)
مصطلحات موضوعية: Physics - Optics, Condensed Matter - Materials Science
الوصف: Semiconductor colloidal quantum wells (CQWs) make an exciting quasi-2D class of nanocrystals thanks to their unique properties including their highly anisotropic optical transition dipole moment (TDM). Thus, employing a film of CQWs with face-down orientation as an emissive layer (EML) in an electroluminescent device is expected to substantially boost photon outcoupling efficiency. Here, we show all-solution-processed colloidal quantum well light-emitting diodes (CQW-LEDs) using a single all-face-down oriented self-assembled monolayer (SAM) film of CQWs that enables a high level of in-plane (IP) TDMs of 92%. This SAM film significantly enhances the outcoupling efficiency from 22% (of standard randomly-oriented emitters) to 34% (of face-down oriented emitters) and charge injection efficiency. This SAM-CQW-LED architecture enables a record high level of external quantum efficiency of 18.1% for the solution-processed type of CQW-LEDs, putting their efficiency performance on par with the hybrid organic-inorganic evaporation-based CQW-LEDs and all other best solution-processed LEDs. In addition, this architecture provides a high maximum brightness of 19,800 cd/m2 with a long operational lifetime of 247 h at 100 cd/m2 along with saturated deep-red emission (651 nm). These findings indicate the effectiveness of oriented self-assembly of CQWs as electrically-driven emissive layers in improving outcoupling and external quantum efficiencies in the CQW-LEDs.
نوع الوثيقة: Working Paper
URL الوصول: http://arxiv.org/abs/2201.08733
رقم الأكسشن: edsarx.2201.08733
قاعدة البيانات: arXiv