تقرير
Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features
| العنوان: | Modeling of V graded In(x)Ga(1-x)N solar cells: comparison of strained and relaxed features |
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| المؤلفون: | Sarollahi, Mirsaeid, Alavijeh, Mohammad Zamani, Allaparthi, Rohith, Alhelais, Reem, Refaei, Malak A., Maruf, Md Helal Uddin, Ware, Morgan E. |
| سنة النشر: | 2022 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Physics - Instrumentation and Detectors, Physics - Optics |
| الوصف: | The optical properties of V graded InGaN solar cells are studied. Graded InGaN well structures with the indium composition increasing then decreasing in a V shaped pattern have been designed. Through polarization doping, this naturally creates alternating p-type and n-type regions. Separate structures are designed by varying the indium alloy profile from GaN to maximum indium concentrations ranging from 20% to 80%, while maintaining a constant overall structure thicknesses of 100 nm. The solar cell parameters under fully strained and relaxed conditions are considered. The results show that a maximum efficiency of 5.5%, under fully strained condition occurs at x=60%. Solar cell efficiency under relaxed conditions increases to a maximum of 8.3% at 90%. While Vegards law predicts the bandgap under relaxed conditions, a Vegard like law is empirically determined from the output of Nextnano for varying In compositions in order to calculate solar cell parameters under strain. Comment: This simulation work was done by Nextnano+ and Matlab. 20 pages, 13 Figures |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2202.03510 |
| رقم الأكسشن: | edsarx.2202.03510 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |