تقرير
Devitalizing noise-driven instability of entangling logic in silicon devices with bias controls
| العنوان: | Devitalizing noise-driven instability of entangling logic in silicon devices with bias controls |
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| المؤلفون: | Ryu, Hoon, Kang, Ji-Hoon |
| المصدر: | Scientific Reports 12, 15200 (2022) |
| سنة النشر: | 2022 |
| المجموعة: | Condensed Matter Quantum Physics |
| مصطلحات موضوعية: | Quantum Physics, Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | The quality of quantum bits (qubits) in silicon is highly vulnerable to charge noise that is omni-present in semiconductor devices and is in principle hard to be suppressed. For a realistically sized quantum dot system based on a silicon-germanium heterostructure whose confinement is manipulated with electrical biases imposed on top electrodes, we computationally explore the noise-robustness of 2-qubit entangling operations with a focus on the controlled-X (CNOT) logic that is essential for designs of gate-based universal quantum logic circuits. With device simulations based on the physics of bulk semiconductors augmented with electronic structure calculations, we not only quantify the degradation in fidelity of single-step CNOT operations with respect to the strength of charge noise, but also discuss a strategy of device engineering that can significantly enhance noise-robustness of CNOT operations with almost no sacrifice of speed compared to the single-step case. Details of device designs and controls that this work presents can establish a rare but practical guideline for potential efforts to secure silicon-based quantum processors using an electrode-driven quantum dot platform. Comment: 23 pages, 6 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1038/s41598-022-19404-0 |
| URL الوصول: | http://arxiv.org/abs/2202.04281 |
| رقم الأكسشن: | edsarx.2202.04281 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1038/s41598-022-19404-0 |
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