تقرير
Development of a Scalable Quantum Memory Platform -- Materials Science of Erbium-Doped TiO$_2$ Thin Films on Silicon
| العنوان: | Development of a Scalable Quantum Memory Platform -- Materials Science of Erbium-Doped TiO$_2$ Thin Films on Silicon |
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| المؤلفون: | Singh, Manish Kumar, Wolfowicz, Gary, Wen, Jianguo, Sullivan, Sean E., Prakash, Abhinav, Dibos, Alan M., Awschalom, David D., Heremans, F. Joseph, Guha, Supratik |
| سنة النشر: | 2022 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Physics - Applied Physics |
| الوصف: | Rare-earth ions (REI) have emerged as an attractive candidate for solid-state qubits, particularly as a quantum memory. Their 4f-4f transitions are shielded by filled 5s and 5p orbitals, offering a degree of protection from external electric fields. Embedded within a thin film oxide host, REIs could enable a qubit platform with significant memory capabilities. Furthermore, a silicon-compatible thin film form factor would enable the use of standard semiconductor fabrication processes to achieve chip-based integrability and scalability for functional quantum networks. Towards this goal, we have carried out optical and microstructural studies of erbium-doped polycrystalline and epitaxial TiO$_2$ thin films on Si (100), r-sapphire, and SrTiO$_3$ (100). We observe that the inhomogeneous optical linewidth of the Er photoluminescence is comparable or better for polycrystalline Er:TiO$_2$(grown on Si) in comparison to single crystal epitaxial films on sapphire or SrTiO$_3$, implying a relative insensitivity to extended defects. We investigated the effect of the film/substrate and film/air interface and found that the inhomogeneous linewidth and spectral diffusion can be significantly improved via bottom buffer and top capping layers of undoped TiO$_2$. Using such approaches, we obtain inhomogeneous linewidths of 5.2 GHz and spectral diffusion of 180 MHz in Er:TiO$_2$ /Si(100) films and have demonstrated the engineerability of quantum-relevant properties in these thin films. Comment: 13 pages, 6 figures; corrects the units for spectral diffusion values (MHz throughout the manuscript instead of GHz(typo) in some places) |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2202.05376 |
| رقم الأكسشن: | edsarx.2202.05376 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |