Transition metal dichalcogenides offer unprecedented versatility to engineer 2D materials with tailored properties to explore novel structural and electronic phase transitions. In this work, we present the atomic-scale evolution of the electronic ground state of a monolayer of Nb$_{1-\delta}$Mo$_{\delta}$Se$_2$ across the entire alloy composition range (0 < ${\delta}$ < 1) using low-temperature (300 mK) scanning tunneling microscopy and spectroscopy (STM/STS). In particular, we investigate the atomic and electronic structure of this 2D alloy throughout the metal to semiconductor transition (monolayer NbSe$_2$ to MoSe$_2$). Our measurements let us extract the effective doping of Mo atoms, the bandgap evolution and the band shifts, which are monotonic with ${\delta}$. Furthermore, we demonstrate that collective electronic phases (charge density wave and superconductivity) are remarkably robust against disorder. We further show that the superconducting TC changes non-monotonically with doping. This contrasting behavior in the normal and superconducting state is explained using first-principles calculations. We show that Mo doping decreases the density of states at the Fermi level and the magnitude of pair-breaking spin fluctuations as a function of Mo content. Our results paint a detailed picture of the electronic structure evolution in 2D TMD alloys, which is of utmost relevance for future 2D materials design.
