Extrinsic tunnel Hall effect in CoFeB/MgO/Pt junctions

التفاصيل البيبلوغرافية
العنوان: Extrinsic tunnel Hall effect in CoFeB/MgO/Pt junctions
المؤلفون: Pashenkin, I. Yu., Sapozhnikov, M. V., Gusev, N. S., Karashtin, E. A., Fraerman, A. A.
سنة النشر: 2022
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Other Condensed Matter, Condensed Matter - Mesoscale and Nanoscale Physics
الوصف: The Hall effect that occurs when current flows through a CoFeB/MgO/Pt tunnel junction is investigated. It is shown that the transverse voltage in Pt electrode is nonlinear on a DC voltage applied to the tunnel junction. It has both linear (odd) and quadratic (even) parts. The linear part contains well-known contributions of the anomalous Hall effect in the ferromagnetic electrode, inverse spin-hall effect in platinum and others. The quadratic part is a phenomenon caused by the spin-orbit scattering of electrons in an external electric field induced by a voltage applied to the barrier. This field reaches values of $10^9$ V/m which is close to internal atomic fields. The magnitude of both effects decreases as thickness of Pt electrode is increased due to shunting effects.
Comment: 5 pages, 5 figures
نوع الوثيقة: Working Paper
DOI: 10.1103/PhysRevB.106.L220408
URL الوصول: http://arxiv.org/abs/2206.10264
رقم الأكسشن: edsarx.2206.10264
قاعدة البيانات: arXiv
الوصف
DOI:10.1103/PhysRevB.106.L220408