تقرير
K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering
| العنوان: | K-doped Ba122 epitaxial thin film on MgO substrate by buffer engineering |
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| المؤلفون: | Qin, Dongyi, Iida, Kazumasa, Guo, Zimeng, Wang, Chao, Saito, Hikaru, Hata, Satoshi, Naito, Michio, Yamamoto, Akiyasu |
| سنة النشر: | 2022 |
| مصطلحات موضوعية: | Condensed Matter - Superconductivity |
| الوصف: | Molecular beam epitaxy of K-doped Ba122 (Ba$_{1-x}$K$_x$Fe$_\text{2}$As$_\text{2}$) superconductor was realized on a MgO substrate. Microstructural observation revealed that the undoped Ba122 served as a perfect buffer layer for epitaxial growth of the K-doped Ba122. The film exhibited a high critical temperature of 39.8 K and a high critical current density of 3.9 MA/cm$^\text{2}$ at 4 K. The successful growth of epitaxial thin film will enable artificial single grain boundary on oxide bicrystal substrates and reveal the grain boundary transport nature of K-doped Ba122. Comment: 5 pages, 4 figures, accepted manuscript Supercond. Sci. Technol 2022 |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1088/1361-6668/ac8025 |
| URL الوصول: | http://arxiv.org/abs/2207.06629 |
| رقم الأكسشن: | edsarx.2207.06629 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1088/1361-6668/ac8025 |
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