تقرير
Probing charge noise in few electron CMOS quantum dots
| العنوان: | Probing charge noise in few electron CMOS quantum dots |
|---|---|
| المؤلفون: | Spence, Cameron, Cardoso-Paz, Bruna, Michal, Vincent, Chanrion, Emmanuel, Niegemann, David J., Jadot, Baptiste, Mortemousque, Pierre-André, Klemt, Bernhard, Thiney, Vivien, Bertrand, Benoit, Hutin, Louis, Bäuerle, Christopher, Balestro, Franck, Vinet, Maud, Niquet, Yann-Michel, Meunier, Tristan, Urdampilleta, Matias |
| سنة النشر: | 2022 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | Charge noise is one of the main sources of environmental decoherence for spin qubits in silicon, presenting a major obstacle in the path towards highly scalable and reproducible qubit fabrication. Here we demonstrate in-depth characterization of the charge noise environment experienced by a quantum dot in a CMOS-fabricated silicon nanowire. We probe the charge noise for different quantum dot configurations, finding that it is possible to tune the charge noise over two orders of magnitude, ranging from 1 ueV^2 to 100 ueV^2. In particular, we show that the top interface and the reservoirs are the main sources of charge noise and their effect can be mitigated by controlling the quantum dot extension. Additionally, we demonstrate a novel method for the measurement of the charge noise experienced by a quantum dot in the few electron regime. We measure a comparatively higher charge noise value of 40 ueV^2 at the first electron, and demonstrate that the charge noise is highly dependent on the electron occupancy of the quantum dot. Comment: 6 pages 5 figures, supplementary materials included |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2209.01853 |
| رقم الأكسشن: | edsarx.2209.01853 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |