تقرير
Enhanced photovoltaic effect in graphene-silicon Schottky junction under mechanical manipulation
| العنوان: | Enhanced photovoltaic effect in graphene-silicon Schottky junction under mechanical manipulation |
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| المؤلفون: | Pu, Dong, Anwar, Muhammad Abid, Zhou, Jiachao, Mao, Renwei, Pan, Xin, Chai, Jian, Tian, Feng, Wang, Hua, Hu, Huan, Xu, Yang |
| سنة النشر: | 2023 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Physics - Applied Physics |
| الوصف: | Graphene-silicon Schottky junction (GSJ) which has the potential for large-scale manufacturing and integration can bring new opportunities to Schottky solar cells for photovoltaic (PV) power conversion. However, the essential power conversion limitation for these devices lies in the small open-circuit voltage ($V_{oc}$), which depends on the Schottky barrier height (SBH). In this study, we introduce an electromechanical method based on the flexoelectric effect to enhance the PV efficiency in GSJ. By atomic force microscope (AFM) tip-based indentation and in situ current measurement, the current-voltage (I-V) responses under flexoelectric strain gradient are obtained. The $V_{oc}$ is observed to increase for up to 20$\%$, leading to an evident improvement of the power conversion efficiency. Our studies suggest that strain gradient may offer unprecedented opportunities for the development of GSJ based flexo-photovoltaic applications. Comment: 7 pages, 4 figures. The following article has been accepted by Applied Physics Letters |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1063/5.0128962 |
| URL الوصول: | http://arxiv.org/abs/2301.03205 |
| رقم الأكسشن: | edsarx.2301.03205 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1063/5.0128962 |
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