The pioneering experiments of Karl H. Drexhage explained the classical interaction of light with matter and the modification of the decay rates of an emitter.1 Here, we tried to mimic these experiments in a slightly different configuration and measured the electron mobility of a thin film semiconductor from weak to strong coupling regime. Perylene diimide (organic semiconductor dye) molecules are deposited on a MOSFET device. The refractive index mismatch between the silicon/silicon dioxide layer and the dye molecules forms an interference pattern. The frequency of the interference lines is tuned by changing the thickness of the organic semiconductor. Interestingly, we observed an increase in the electron mobility of the active layer once the system slowly entered into strong coupling condition in a {\lambda} cavity. Whereas resonance tuning of a {\lambda}/2 cavity does not affect the electron transport, suggesting the system is still in the weak coupling regime. These results are further correlated by optical measurements and transfer matrix simulations. The increase in electron mobility is not large due to high dissipation or low-quality factors of the cavity modes. However, the mirrorless configuration presented here may offer a simpler way of studying the properties of the polaritonic states.
