تقرير
A room-temperature moir\'e interlayer exciton laser
| العنوان: | A room-temperature moir\'e interlayer exciton laser |
|---|---|
| المؤلفون: | Lin, Qiaoling, Fang, Hanlin, Liu, Yuanda, Zhang, Yi, Fischer, Moritz, Li, Juntao, Hagel, Joakim, Brem, Samuel, Malic, Ermin, Stenger, Nicolas, Sun, Zhipei, Wubs, Martijn, Xiao, Sanshui |
| سنة النشر: | 2023 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Physics - Optics, Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | Moir\'e superlattices in van der Waals heterostructures offer highly tunable quantum systems with emergent electronic and excitonic properties such as superconductivity, topological edge states, and moir\'e-trapped excitons. Theoretical calculations predicted the existence of the moir\'e potential at elevated temperatures; however, its impact on the optical properties of interlayer excitons (IXs) at room temperature is lacking, and the benefits of the moir\'e effects for lasing applications remain unexplored. We report that the moir\'e potential in a molybdenum disulfide/tungsten diselenide (MoS2/WSe2) heterobilayer system can significantly enhance light emission, elongate the IX lifetime, and modulate the IX emission energy at room temperature. By integrating a moir\'e superlattice with a silicon topological nanocavity, we achieve ultra-low-threshold lasing at the technologically important telecommunication O-band thanks to the significant moir\'e modulation. Moreover, the high-quality topological nanocavities facilitate the highest spectral coherence of < 0.1 nm linewidth among all reported two-dimensional material-based laser systems. Our findings not only open a new avenue for studying correlated states at elevated temperatures, but also enable novel architectures for integrated on-chip photonics and optoelectronics. |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2302.01266 |
| رقم الأكسشن: | edsarx.2302.01266 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |