تقرير
Employing High-temperature-grown SrZrO$_3$ Buffer to Enhance the Electron Mobility in La:BaSnO$_3$-based Heterostructures
| العنوان: | Employing High-temperature-grown SrZrO$_3$ Buffer to Enhance the Electron Mobility in La:BaSnO$_3$-based Heterostructures |
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| المؤلفون: | Ngabonziza, Prosper, Park, Jisung, Sigle, Wilfried, van Aken, Peter A., Mannhart, Jochen, Schlom, Darrell G. |
| المصدر: | Applied Physics Letters 122, 241902 (2023) |
| سنة النشر: | 2023 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science |
| الوصف: | We report a synthetic route to achieve high electron mobility at room temperature in epitaxial La:BaSnO$_3$/SrZrO$_3$ heterostructures prepared on several oxide substrates. Room-temperature mobilities of 157, 145, and 143 cm$^2$V$^{-1}$s$^{-1}$ are achieved for heterostructures grown on DyScO$_3$ (110), MgO (001), and TbScO$_3$ (110) crystalline substrates, respectively. This is realized by first employing pulsed laser deposition to grow at very high temperature the SrZrO$_3$ buffer layer to reduce dislocation density in the active layer, then followed by the epitaxial growth of an overlaying La:BaSnO$_3$ active layer by molecular-beam epitaxy. Structural properties of these heterostructures are investigated, and the extracted upper limit of threading dislocations is well below $1.0\times 10^{10}$cm$^{-2}$ for buffered films on DyScO$_3$, MgO, and TbScO$_3$ substrates. The present results provide a promising route towards achieving high mobility in buffered La:BaSnO$_3$ films prepared on most, if not all, oxide substrates with large compressive or tensile lattice mismatches to the film. Comment: 9 pages and 5 Figures in the Maintext. 3 pages and 3 Figures in the Supplementary Information |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1063/5.0148467 |
| URL الوصول: | http://arxiv.org/abs/2302.12323 |
| رقم الأكسشن: | edsarx.2302.12323 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1063/5.0148467 |
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