تقرير
FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors
| العنوان: | FerroHEMTs: High-Current and High-Speed All-Epitaxial AlScN/GaN Ferroelectric Transistors |
|---|---|
| المؤلفون: | Casamento, J., Nomoto, K., Nguyen, T. S., Lee, H., Savant, C., Li, L., Hickman, A., Maeda, T., Encomendero, J., Gund, V., Lal, A., Hwang, J. C. M., Xing, H. G., Jena, D. |
| المصدر: | IEEE IEDM Technical Digest, December 2022 |
| سنة النشر: | 2023 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Physics - Applied Physics, Condensed Matter - Materials Science |
| الوصف: | We report the first observation of ferroelectric gating in AlScN barrier wide-bandgap nitride transistors. These FerroHEMT devices realized by direct epitaxial growth represent a new class of ferroelectric transistors in which the semiconductor is itself polar, and the crystalline ferroelectric barrier is lattice-matched to the substrate. The FerroHEMTs reported here use the thinnest nitride high K and ferroelectric barriers to date to deliver the highest on currents at 4 A/mm, and highest speed AlScN transistors with fmax larger than 150 GHz observed in any ferroelectric transistor. The FerroHEMTs exhibit hysteretic Id Vgs loops with subthreshold slopes below the Boltzmann limit. A control AlN barrier HEMT exhibits neither hysteretic, nor sub Boltzmann behavior. While these results introduce the first epitaxial high K and ferroelectric barrier technology to RF and mm wave electronics, they are also of interest as a new material platform for combining memory and logic functionalities in digital electronics. Comment: 4 pages, 8 figures, appeared in IEEE IEDM, December 2022 |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1109/IEDM45625.2022.10019485 |
| URL الوصول: | http://arxiv.org/abs/2302.14209 |
| رقم الأكسشن: | edsarx.2302.14209 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1109/IEDM45625.2022.10019485 |
|---|