تقرير
Blocking transition of interface traps in MoS$_2$-on-SiO$_2$ FETs
| العنوان: | Blocking transition of interface traps in MoS$_2$-on-SiO$_2$ FETs |
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| المؤلفون: | Jana, Santu Prasad, Gupta, Suraina, Gupta, Anjan K. |
| المصدر: | Phys. Rev. B 108, 195411 (2023) |
| سنة النشر: | 2023 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science |
| الوصف: | Electrical conductivity with gate-sweep in a few layer MoS$_2$-on-SiO$_2$ field-effect-transistor shows an abrupt reduction in hysteresis when cooled. The hysteresis and time dependent conductivity of the MoS$_2$ channel are modeled using the dynamics of interface traps' occupancy. The reduction in hysteresis is found to be steepest at a blocking temperature near 225 K. This is attributed to the interplay between thermal and barrier energies and fitted using a distribution of the latter. Further, the charge stored in the blocked traps is programmed at low temperatures by cooling under suitable gate voltage. Thus the threshold gate-voltage in nearly non-hysteretic devices at 80 K temperature is reversibly controlled over a wide range. Comment: 14 pages, 13 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1103/PhysRevB.108.195411 |
| URL الوصول: | http://arxiv.org/abs/2303.13902 |
| رقم الأكسشن: | edsarx.2303.13902 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1103/PhysRevB.108.195411 |
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