تقرير
Modeling of Surface Damage at the Si/SiO$_2$-interface of Irradiated MOS-capacitors
العنوان: | Modeling of Surface Damage at the Si/SiO$_2$-interface of Irradiated MOS-capacitors |
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المؤلفون: | Akchurin, N., Altopp, G., Burkle, B., Frey, W. D., Heintz, U., Hinton, N., Hoeferkamp, M., Kazhykarim, Y., Kuryatkov, V., Mengke, T., Peltola, T., Seidel, S., Spencer, E., Tripathi, M., Voelker, J. |
المصدر: | JINST 18 P08001 (2023) |
سنة النشر: | 2023 |
المجموعة: | Physics (Other) |
مصطلحات موضوعية: | Physics - Instrumentation and Detectors |
الوصف: | Surface damage caused by ionizing radiation in SiO$_2$ passivated silicon particle detectors consists mainly of the accumulation of a positively charged layer along with trapped-oxide-charge and interface traps inside the oxide and close to the Si/SiO$_2$-interface. High density positive interface net charge can be detrimental to the operation of a multi-channel $n$-on-$p$ sensor since the inversion layer generated under the Si/SiO$_2$-interface can cause loss of position resolution by creating a conduction channel between the electrodes. In the investigation of the radiation-induced accumulation of oxide charge and interface traps, a capacitance-voltage characterization study of n/$\gamma$- and $\gamma$-irradiated Metal-Oxide-Semiconductor (MOS) capacitors showed that close agreement between measurement and simulation were possible when oxide charge density was complemented by both acceptor- and donor-type deep interface traps with densities comparable to the oxide charges. Corresponding inter-strip resistance simulations of a $n$-on-$p$ sensor with the tuned oxide charge density and interface traps show close agreement with experimental results. The beneficial impact of radiation-induced accumulation of deep interface traps on inter-electrode isolation may be considered in the optimization of the processing parameters of isolation implants on $n$-on-$p$ sensors for the extreme radiation environments. Comment: Corresponding author: T. Peltola. 24 pages, 17 figures, 6 tables |
نوع الوثيقة: | Working Paper |
DOI: | 10.1088/1748-0221/18/08/P08001 |
URL الوصول: | http://arxiv.org/abs/2305.14316 |
رقم الأكسشن: | edsarx.2305.14316 |
قاعدة البيانات: | arXiv |
DOI: | 10.1088/1748-0221/18/08/P08001 |
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