X-ray: Discovering DRAM Internal Structure and Error Characteristics by Issuing Memory Commands

التفاصيل البيبلوغرافية
العنوان: X-ray: Discovering DRAM Internal Structure and Error Characteristics by Issuing Memory Commands
المؤلفون: Nam, Hwayong, Baek, Seungmin, Wi, Minbok, Kim, Michael Jaemin, Park, Jaehyun, Song, Chihun, Kim, Nam Sung, Ahn, Jung Ho
سنة النشر: 2023
المجموعة: Computer Science
مصطلحات موضوعية: Computer Science - Cryptography and Security, Computer Science - Hardware Architecture
الوصف: The demand for accurate information about the internal structure and characteristics of dynamic random-access memory (DRAM) has been on the rise. Recent studies have explored the structure and characteristics of DRAM to improve processing in memory, enhance reliability, and mitigate a vulnerability known as rowhammer. However, DRAM manufacturers only disclose limited information through official documents, making it difficult to find specific information about actual DRAM devices. This paper presents reliable findings on the internal structure and characteristics of DRAM using activate-induced bitflips (AIBs), retention time test, and row-copy operation. While previous studies have attempted to understand the internal behaviors of DRAM devices, they have only shown results without identifying the causes or have analyzed DRAM modules rather than individual chips. We first uncover the size, structure, and operation of DRAM subarrays and verify our findings on the characteristics of DRAM. Then, we correct misunderstood information related to AIBs and demonstrate experimental results supporting the cause of rowhammer. We expect that the information we uncover about the structure, behavior, and characteristics of DRAM will help future DRAM research.
Comment: 4 pages, 7 figures, accepted at IEEE Computer Architecture Letters
نوع الوثيقة: Working Paper
DOI: 10.1109/LCA.2023.3296153
URL الوصول: http://arxiv.org/abs/2306.03366
رقم الأكسشن: edsarx.2306.03366
قاعدة البيانات: arXiv
الوصف
DOI:10.1109/LCA.2023.3296153