Ionically-Driven Synthesis and Exchange Bias in Mn$_{4}$N/MnN$_{x}$ Heterostructures

التفاصيل البيبلوغرافية
العنوان: Ionically-Driven Synthesis and Exchange Bias in Mn$_{4}$N/MnN$_{x}$ Heterostructures
المؤلفون: Chen, Zhijie, Jensen, Christopher J., Liu, Chen, Zhang, Xixiang, Liu, Kai
المصدر: Applied Physics Letters, 123, 082403 (2023)
سنة النشر: 2023
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics
الوصف: Ferrimagnets have received renewed attention as a promising platform for spintronic applications. Of particular interest is the Mn4N from the ${\epsilon}$-phase of the manganese nitride as an emergent rare-earth-free spintronic material due to its perpendicular magnetic anisotropy, small saturation magnetization, high thermal stability, and large domain wall velocity. We have achieved high-quality (001)-ordered Mn$_{4}$N thin film by sputtering Mn onto ${\eta}$-phase Mn$_{3}$N$_{2}$ seed layers on Si substrates. As the deposited Mn thickness varies, nitrogen ion migration across the Mn$_{3}$N$_{2}$/Mn layers leads to a continuous evolution of the layers to Mn$_{3}$N$_{2}$/Mn$_{2}$N/Mn$_{4}$N, Mn$_{2}$N/Mn$_{4}$N, and eventually Mn$_{4}$N alone. The ferrimagnetic Mn$_{4}$N indeed exhibits perpendicular magnetic anisotropy, and forms via a nucleation-and-growth mechanism. The nitrogen ion migration is also manifested in a significant exchange bias, up to 0.3 T at 5 K, due to the interactions between ferrimagnetic Mn$_{4}$N and antiferromagnetic Mn$_{3}$N$_{2}$ and Mn$_{2}$N. These results demonstrate a promising all-nitride magneto-ionic platform with remarkable tunability for device applications.
Comment: 21 pages, 5 figures, 7 pages of supplementary material with 5 figures
نوع الوثيقة: Working Paper
DOI: 10.1063/5.0165895
URL الوصول: http://arxiv.org/abs/2308.04274
رقم الأكسشن: edsarx.2308.04274
قاعدة البيانات: arXiv