تقرير
Transport Study of Charge Carrier Scattering in Monolayer WSe$_2$
| العنوان: | Transport Study of Charge Carrier Scattering in Monolayer WSe$_2$ |
|---|---|
| المؤلفون: | Joe, Andrew Y., Pistunova, Kateryna, Kaasbjerg, Kristen, Wang, Ke, Kim, Bumho, Rhodes, Daniel A., Taniguchi, Takashi, Watanabe, Kenji, Hone, James, Low, Tony, Jauregui, Luis A., Kim, Philip |
| سنة النشر: | 2023 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | Employing flux-grown single crystal WSe$_2$, we report charge carrier scattering behaviors measured in $h$-BN encapsulated monolayer field effect transistors. We perform quantum transport measurements across various hole densities and temperatures and observe a non-monotonic change of transport mobility $\mu$ as a function of hole density in the degenerately doped sample. This unusual behavior can be explained by energy dependent scattering amplitude of strong defects calculated using the T-matrix approximation. Utilizing long mean-free path ($>$500 nm), we demonstrate the high quality of our electronic devices by showing quantized conductance steps from an electrostatically-defined quantum point contact. Our results show the potential for creating ultra-high quality quantum optoelectronic devices based on atomically thin semiconductors. Comment: 6 pages, 4 figures |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2310.04624 |
| رقم الأكسشن: | edsarx.2310.04624 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |