تقرير
Electronic properties of c-BN/diamond heterostructures for high-frequency high-power applications
| العنوان: | Electronic properties of c-BN/diamond heterostructures for high-frequency high-power applications |
|---|---|
| المؤلفون: | Mullen, Jeffrey T., Boulton, James A., Pan, Minghao, Kim, Ki Wook |
| سنة النشر: | 2023 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science |
| الوصف: | Using first principles calculations, this work investigates the suitability of diamond/c-BN heterojunctions for high frequency, high power device applications. The key quantities of band offsets and interface charge polarization are examined for different crystallographic orientations [(110), (111), or (100)], bond terminations (C-B or C-N), and substrates (diamond or c-BN). The results indicate that both the (111) and (100) structures with polar interfaces are likely to be a type-I alignment with the diamond conduction and valence band extrema nested within the c-BN bandgap, whereas the non-polar (110) counterpart may form type II as the valence band of c-BN is shifted down substantially lower. The (111) and (100) structures also show net charge polarization in a narrow region at the interface. The electron-deficient and electron-rich nature of the C-B and C-N bonding are found to induce charge redistribution leading to an essentially 2D sheet of negative and positive polarization. With the predicted band alignments suitable for carrier confinement as well as the possibility of the modulation and polarization doping, the diamond/c-BN heterostructures are a promising candidate for high-performance electronic devices with a highly conductive 2D channel. Both p-type and n-type devices appear possible with a judicious choice of the heterojunction configuration. Comment: 18 pages, 5 figures |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2310.06955 |
| رقم الأكسشن: | edsarx.2310.06955 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |