تقرير
Coulomb contribution to Shockley-Read-Hall (SRH) recombination
| العنوان: | Coulomb contribution to Shockley-Read-Hall (SRH) recombination |
|---|---|
| المؤلفون: | Sakowski, Konrad, Strak, Pawel, Kempisty, Pawel, Piechota, Jacek, Grzegory, Izabella, Perlin, Piotr, Monroy, Eva, Kaminska, Agata, Krukowski, Stanislaw |
| سنة النشر: | 2023 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science |
| الوصف: | Defect-mediated nonradiative recombination, known as Shockley-Read-Hall (SRH) recombination is reformulated. The introduced model considers Coulomb attraction between charged deep defect and the approaching free carrier, showing that this effect may cause considerable increase of the carrier velocity approaching the recombination center. The effect considerably increases the carrier capture rates. It is demonstrated that in the typical semiconductor device or semiconductor medium, the SRH recombination cannot be neglected at low temperatures. The SRH is more effective in the case of low doped semiconductors. Effective screening by mobile carrier density could reduce the effect, leading to SRH rate increase. Comment: 14 pages, 3 figures |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2310.11823 |
| رقم الأكسشن: | edsarx.2310.11823 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |