تقرير
Fast optoelectronic charge state conversion of silicon vacancies in diamond
| العنوان: | Fast optoelectronic charge state conversion of silicon vacancies in diamond |
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| المؤلفون: | Rieger, Manuel, Villafane, Viviana, Todenhagen, Lina M., Matthies, Stephan, Appel, Stefan, Brandt, Martin S., Mueller, Kai, Finley, Jonathan J. |
| المصدر: | Sci. Adv. 10 (2024) 1126 |
| سنة النشر: | 2023 |
| المجموعة: | Physics (Other) Quantum Physics |
| مصطلحات موضوعية: | Quantum Physics, Physics - Applied Physics |
| الوصف: | Group IV vacancy color centers in diamond are promising spin-photon interfaces with strong potential for applications for photonic quantum technologies. Reliable methods for controlling and stabilizing their charge state are urgently needed for scaling to multi-qubit devices. Here, we manipulate the charge state of silicon vacancy (SiV) ensembles by combining luminescence and photo-current spectroscopy. We controllably convert the charge state between the optically active SiV$^-$ and dark SiV$^{2-}$ with MHz rates and 90% contrast by judiciously choosing the local potential applied to in-plane surface electrodes and the laser excitation wavelength. We observe intense SiV$^-$ photoluminescence under hole-capture, measure the intrinsic conversion time from the dark SiV$^{2-}$ to the bright SiV$^-$ to be 36.4(6.7)ms and demonstrate how it can be enhanced by a factor of $10^5$ via optical pumping. Moreover, we obtain new information on the defects that contribute to photo-conductivity, indicating the presence of substitutional nitrogen and divacancies. Comment: 5 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1126/sciadv.adl4265 |
| URL الوصول: | http://arxiv.org/abs/2310.12288 |
| رقم الأكسشن: | edsarx.2310.12288 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1126/sciadv.adl4265 |
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