تقرير
Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors
| العنوان: | Experimental Demonstration of Non-Stateful In-Memory Logic with 1T1R OxRAM Valence Change Mechanism Memristors |
|---|---|
| المؤلفون: | Padberg, Henriette, Regev, Amir, Piccolboni, Giuseppe, Bricalli, Alessandro, Molas, Gabriel, Nodin, Jean Francois, Kvatinsky, Shahar |
| المصدر: | IEEE Transactions on Circuits and Systems II: Express Briefs (2023), pages 1-1 |
| سنة النشر: | 2023 |
| المجموعة: | Computer Science |
| مصطلحات موضوعية: | Computer Science - Hardware Architecture, Computer Science - Emerging Technologies, Electrical Engineering and Systems Science - Systems and Control |
| الوصف: | Processing-in-memory (PIM) is attractive to overcome the limitations of modern computing systems. Numerous PIM systems exist, varying by the technologies and logic techniques used. Successful operation of specific logic functions is crucial for effective processing-in-memory. Memristive non-stateful logic techniques are compatible with CMOS logic and can be integrated into a 1T1R memory array, similar to commercial RRAM products. This paper analyzes and demonstrates two non-stateful logic techniques: 1T1R logic and scouting logic. As a first step, the used 1T1R SiO\textsubscript{x} valence change mechanism memristors are characterized in reference to their feasibility to perform logic functions. Various logical functions of the two logic techniques are experimentally demonstrated, showing correct functionality in all cases. Following the results, the challenges and limitations of the RRAM characteristics and 1T1R configuration for the application in logical functions are discussed. Comment: 5 pages, 6 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1109/TCSII.2023.3302235 |
| URL الوصول: | http://arxiv.org/abs/2310.16843 |
| رقم الأكسشن: | edsarx.2310.16843 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1109/TCSII.2023.3302235 |
|---|