تقرير
Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing
| العنوان: | Fabrication of quantum emitters in aluminium nitride by Al-ion implantation and thermal annealing |
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| المؤلفون: | Hernández, E. Nieto, Yağcı, H. B., Pugliese, V., Aprà, P., Cannon, J. K., Bishop, S. G., Hadden, J., Tchernij, S. Ditalia, Olivero, Bennett, A. J., Forneris, J. |
| المصدر: | Appl. Phys. Lett. 124, 124003 (2024) |
| سنة النشر: | 2023 |
| المجموعة: | Condensed Matter Physics (Other) Quantum Physics |
| مصطلحات موضوعية: | Physics - Applied Physics, Condensed Matter - Materials Science, Quantum Physics |
| الوصف: | Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III- nitrides have previously been shown to host efficient SPEs which are attributed to deep energy levels within the large bandgap of the material, in a way that is similar to extensively investigated colour centres in diamond. Anti-bunched emission from defect centres within gallium nitride (GaN) and aluminium nitride (AlN) have been recently demonstrated. While such emitters are particularly interesting due to the compatibility of III-nitrides with cleanroom processes, the nature of such defects and the optimal conditions for forming them are not fully understood. Here, we investigate Al implantation on a commercial AlN epilayer through subsequent steps of thermal annealing and confocal microscopy measurements. We observe a fluence-dependent increase in the density of the emitters, resulting in creation of ensembles at the maximum implantation fluence. Annealing at 600 {\deg}C results in the optimal yield in SPEs formation at the maximum fluence, while a significant reduction in SPE density is observed at lower fluences. These findings suggest that the mechanism of vacancy formation plays a key role in the creation of the emitters, and open new perspectives in the defect engineering of SPEs in solid state. Comment: 11 pages, 7 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1063/5.0185534 |
| URL الوصول: | http://arxiv.org/abs/2310.20540 |
| رقم الأكسشن: | edsarx.2310.20540 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1063/5.0185534 |
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