تقرير
Strain fluctuations unlock ferroelectricity in wurtzites
العنوان: | Strain fluctuations unlock ferroelectricity in wurtzites |
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المؤلفون: | Baksa, Steven M., Gelin, Simon, Oturak, Seda, Spurling, Robert Jackson, Sepehrinezhad, Alireza, Jacques, Leonard, Trolier-McKinstry, Susan E., van Duin, Adri C. T., Maria, Jon-Paul, Rappe, Andrew M., Dabo, Ismaila |
سنة النشر: | 2023 |
المجموعة: | Condensed Matter |
مصطلحات موضوعية: | Condensed Matter - Materials Science |
الوصف: | Ferroelectrics are of practical interest for non-volatile data storage due to their reorientable, crystallographically defined polarization. Yet efforts to integrate conventional ferroelectrics into ultrathin memories have been frustrated by film-thickness limitations, which impede polarization reversal under low applied voltage. Wurtzite materials, including magnesium-substituted zinc oxide (Zn,Mg)O, have been shown to exhibit scalable ferroelectricity as thin films. In this work, we explain the origins of ferroelectricity in (Zn,Mg)O, showing that large strain fluctuations emerge locally in (Zn,Mg)O and can reduce local barriers to ferroelectric switching by more than 40%. We provide concurrent experimental and computational evidence of these effects by demonstrating polarization switching in ZnO/(Zn,Mg)O/ZnO heterostructures featuring built-in interfacial strain gradients. These results open up an avenue to develop scalable ferroelectrics by controlling strain fluctuations atomistically. Comment: 12 pages, 5 figures |
نوع الوثيقة: | Working Paper |
URL الوصول: | http://arxiv.org/abs/2311.05413 |
رقم الأكسشن: | edsarx.2311.05413 |
قاعدة البيانات: | arXiv |
الوصف غير متاح. |