Controlled Interlayer Exciton Ionization in an Electrostatic Trap in Atomically Thin Heterostructures

التفاصيل البيبلوغرافية
العنوان: Controlled Interlayer Exciton Ionization in an Electrostatic Trap in Atomically Thin Heterostructures
المؤلفون: Joe, Andrew Y., Valdivia, Andrés M. Mier, Jauregui, Luis A., Pistunova, Kateryna, Ding, Dapeng, Zhou, You, Scuri, Giovanni, De Greve, Kristiaan, Sushko, Andrey, Kim, Bumho, Taniguchi, Takashi, Watanabe, Kenji, Hone, James C., Lukin, Mikhail D., Park, Hongkun, Kim, Philip
سنة النشر: 2023
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Strongly Correlated Electrons
الوصف: Atomically thin semiconductor heterostructures provide a two-dimensional (2D) device platform for creating high densities of cold, controllable excitons. Interlayer excitons (IEs), bound electrons and holes localized to separate 2D quantum well layers, have permanent out-of-plane dipole moments and long lifetimes, allowing their spatial distribution to be tuned on demand. Here, we employ electrostatic gates to trap IEs and control their density. By electrically modulating the IE Stark shift, electron-hole pair concentrations above $2\times10^{12}$ cm$^{-2}$ can be achieved. At this high IE density, we observe an exponentially increasing linewidth broadening indicative of an IE ionization transition, independent of the trap depth. This runaway threshold remains constant at low temperatures, but increases above 20 K, consistent with the quantum dissociation of a degenerate IE gas. Our demonstration of the IE ionization in a tunable electrostatic trap represents an important step towards the realization of dipolar exciton condensates in solid-state optoelectronic devices.
Comment: 14 pages, 4 main figures, 1 extended data figure
نوع الوثيقة: Working Paper
DOI: 10.1038/s41467-024-51128-9
URL الوصول: http://arxiv.org/abs/2311.12941
رقم الأكسشن: edsarx.2311.12941
قاعدة البيانات: arXiv
الوصف
DOI:10.1038/s41467-024-51128-9