تقرير
Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70$~\mu$m pixel pitch
| العنوان: | Monolithic MHz-frame rate digital SiPM-IC with sub-100 ps precision and 70$~\mu$m pixel pitch |
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| المؤلفون: | Diehl, I., Hansen, K., Vanat, T., Vignola, G., Feindt, F., Rastorguev, D., Spannagel, S. |
| سنة النشر: | 2023 |
| المجموعة: | Physics (Other) |
| مصطلحات موضوعية: | Physics - Instrumentation and Detectors |
| الوصف: | This paper presents the design and characterization of a monolithic integrated circuit (IC) including digital silicon photomultipliers (dSiPMs) arranged in a 32$~\times~$32 pixel matrix at 70$~\mu$m pitch. The IC provides per-quadrant time stamping and hit-map readout, and is fabricated in a standard 150-nm CMOS technology. Each dSiPM pixel consists of four single-photon avalanche diodes (SPADs) sharing a quenching and subsequent processing circuitry and has a fill factor of 30$~\%$. A sub-100$~$ps precision, 12-bit time-to-digital converter (TDC) provides timestamps per quadrant with an acquisition rate of 3$~$MHz. Together with the hit map, the total sustained data throughput of the IC amounts to 4$~$Gbps. Measurements obtained in a dark, temperature-stable environment as well as by using a pulsed laser environment show the full dSiPM-IC functionality. The dark-count rate (DCR) as function of the overvoltage and temperature, the TDC resolution, differential and integral nonlinearity (DNL/INL) as well as the propagation-delay variations across the matrix are presented. With aid of additional peripheral test structures, the main building blocks are characterized and key parameters are presented. Comment: 16 pages, 13 figures, 1 table |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2311.13220 |
| رقم الأكسشن: | edsarx.2311.13220 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |