تقرير
Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K
| العنوان: | Local laser-induced solid-phase recrystallization of phosphorus-implanted Si/SiGe heterostructures for contacts below 4.2 K |
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| المؤلفون: | Neul, Malte, Sprave, Isabelle V., Diebel, Laura K., Zinkl, Lukas G., Fuchs, Florian, Yamamoto, Yuji, Vedder, Christian, Bougeard, Dominique, Schreiber, Lars R. |
| سنة النشر: | 2023 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Physics - Applied Physics, Condensed Matter - Materials Science |
| الوصف: | Si/SiGe heterostructures are of high interest for high mobility transistor and qubit applications, specifically for operations below 4.2 K. In order to optimize parameters such as charge mobility, built-in strain, electrostatic disorder, charge noise and valley splitting, these heterostructures require Ge concentration profiles close to mono-layer precision. Ohmic contacts to undoped heterostructures are usually facilitated by a global annealing step activating implanted dopants, but compromising the carefully engineered layer stack due to atom diffusion and strain relaxation in the active device region. We demonstrate a local laser-based annealing process for recrystallization of ion-implanted contacts in SiGe, greatly reducing the thermal load on the active device area. To quickly adapt this process to the constantly evolving heterostructures, we deploy a calibration procedure based exclusively on optical inspection at room-temperature. We measure the electron mobility and contact resistance of laser annealed Hall bars at temperatures below 4.2 K and obtain values similar or superior than that of a globally annealed reference samples. This highlights the usefulness of laser-based annealing to take full advantage of high-performance Si/SiGe heterostructures. Comment: 11 pages, 8 figures |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1103/PhysRevMaterials.8.043801 |
| URL الوصول: | http://arxiv.org/abs/2312.06267 |
| رقم الأكسشن: | edsarx.2312.06267 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1103/PhysRevMaterials.8.043801 |
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