تقرير
Engineering Plateau Phase Transition in Quantum Anomalous Hall Multilayers
| العنوان: | Engineering Plateau Phase Transition in Quantum Anomalous Hall Multilayers |
|---|---|
| المؤلفون: | Zhuo, Deyi, Zhou, Ling-Jie, Zhao, Yi-Fan, Zhang, Ruoxi, Yan, Zi-Jie, Wang, Annie G., Chan, Moses H. W., Liu, Chao-Xing, Chen, Chui-Zhen, Chang, Cui-Zu |
| سنة النشر: | 2023 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science |
| الوصف: | The plateau phase transition in quantum anomalous Hall (QAH) insulators corresponds to a quantum state wherein a single magnetic domain gives way to multiple magnetic domains and then re-converges back to a single magnetic domain. The layer structure of the sample provides an external knob for adjusting the Chern number C of the QAH insulators. Here, we employ molecular beam epitaxy (MBE) to grow magnetic topological insulator (TI) multilayers with an asymmetric layer structure and realize the magnetic field-driven plateau phase transition between two QAH states with odd Chern number change {\Delta}C. In multilayer structures with C=+-1 and C=+-2 QAH states, we find two characteristic power-law behaviors between temperature and the scaling variables on the magnetic field at transition points. The critical exponents extracted for the plateau phase transitions with {\Delta}C=1 and {\Delta}C=3 in QAH insulators are found to be nearly identical, specifically, k1~0.390+-0.021 and k2~0.388+-0.015, respectively. We construct a four-layer Chalker-Coddington network model to understand the consistent critical exponents for the plateau phase transitions with {\Delta}C=1 and {\Delta}C=3. This work will motivate further investigations into the critical behaviors of plateau phase transitions with different {\Delta}C in QAH insulators and provide new opportunities for the development of QAH chiral edge current-based electronic and spintronic devices. Comment: 18 pages, 4 figures. Comments are welcome |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2312.15072 |
| رقم الأكسشن: | edsarx.2312.15072 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |