تقرير
Envelope-function theory of inhomogeneous strain in semiconductor nanostructures
| العنوان: | Envelope-function theory of inhomogeneous strain in semiconductor nanostructures |
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| المؤلفون: | Secchi, Andrea, Troiani, Filippo |
| المصدر: | Phys. Rev. B 110, 045420 (2024) |
| سنة النشر: | 2023 |
| المجموعة: | Condensed Matter Quantum Physics |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science, Quantum Physics |
| الوصف: | Strain represents an ubiquitous feature in semiconductor heterostructures, and can be engineered by different means in order to improve the properties of various devices, including advanced MOSFETs and spin-based qubits. However, its treatment within the envelope function framework is well established only for the homogeneous case, thanks to the theory of Bir and Pikus. Here, we generalize such theory to the case of inhomogeneous strain. By fully accounting for the relativistic effects and metric aspects of the problem, we derive a complete envelope-function Hamiltonian, including the terms that depend on first and second spatial derivatives of the strain tensor. Comment: 4.75 pages + Appendices and Supplementary Material (all references at the end); 4 figures. Revised version |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1103/PhysRevB.110.045420 |
| URL الوصول: | http://arxiv.org/abs/2312.15967 |
| رقم الأكسشن: | edsarx.2312.15967 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1103/PhysRevB.110.045420 |
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