تقرير
In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN
| العنوان: | In situ investigation of growth modes during plasma-assisted molecular beam epitaxy of (0001)GaN |
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| المؤلفون: | Koblmüller, G., Fernández-Garrido, S., Calleja, E., Speck, J. S. |
| المصدر: | Appl. Phys. Lett. 91, 161904 (2007) |
| سنة النشر: | 2024 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Physics - Applied Physics, Condensed Matter - Materials Science |
| الوصف: | Real-time analysis of the growth modes during homoepitaxial (0001)GaN growth by plasma-assisted molecular beam epitaxy was performed using reflection high energy electron diffraction. A growth mode map was established as a function of Ga/N flux ratio and growth temperature, exhibiting distinct transitions between three-dimensional (3D), layer-by-layer and step-flow growth mode. The layer-by-layer to step-flow growth transition under Ga-rich growth was surfactant mediated and related to a Ga adlayer coverage of one monolayer. Under N-rich conditions the transition from 3D to layer-by-layer growth was predominantly thermally activated, facilitating two-dimensional growth at temperatures of thermal decomposition. |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1063/1.2789691 |
| URL الوصول: | http://arxiv.org/abs/2401.17341 |
| رقم الأكسشن: | edsarx.2401.17341 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1063/1.2789691 |
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