Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition

التفاصيل البيبلوغرافية
العنوان: Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition
المؤلفون: Zhang, Zhepeng, Hoang, Lauren, Hocking, Marisa, Hu, Jenny, Zaborski Jr., Gregory, Reddy, Pooja, Dollard, Johnny, Goldhaber-Gordon, David, Heinz, Tony F., Pop, Eric, Mannix, Andrew J.
سنة النشر: 2024
المجموعة: Condensed Matter
Physics (Other)
مصطلحات موضوعية: Physics - Applied Physics, Condensed Matter - Materials Science
الوصف: Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS$_2$ growth with tunable morphologies - from separated single-crystal domains to continuous monolayer films - on a variety of substrates, including sapphire, SiO$_2$, and Au. These WS$_2$ films exhibit narrow neutral exciton photoluminescence linewidths down to 33 meV and room-temperature mobility up to 34 - 36 cm$^2$V$^-$$^1$s$^-$$^1$). Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS$_2$, MoxW$_1$$_-$$_x$S$_2$ alloys, and in-plane WS$_2$-MoS$_2$ heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale.
نوع الوثيقة: Working Paper
URL الوصول: http://arxiv.org/abs/2403.03482
رقم الأكسشن: edsarx.2403.03482
قاعدة البيانات: arXiv