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Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition
العنوان: | Chemically Tailored Growth of 2D Semiconductors via Hybrid Metal-Organic Chemical Vapor Deposition |
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المؤلفون: | Zhang, Zhepeng, Hoang, Lauren, Hocking, Marisa, Hu, Jenny, Zaborski Jr., Gregory, Reddy, Pooja, Dollard, Johnny, Goldhaber-Gordon, David, Heinz, Tony F., Pop, Eric, Mannix, Andrew J. |
سنة النشر: | 2024 |
المجموعة: | Condensed Matter Physics (Other) |
مصطلحات موضوعية: | Physics - Applied Physics, Condensed Matter - Materials Science |
الوصف: | Two-dimensional (2D) semiconducting transition-metal dichalcogenides (TMDCs) are an exciting platform for new excitonic physics and next-generation electronics, creating a strong demand to understand their growth, doping, and heterostructures. Despite significant progress in solid-source (SS-) and metal-organic chemical vapor deposition (MOCVD), further optimization is necessary to grow highly crystalline 2D TMDCs with controlled doping. Here, we report a hybrid MOCVD growth method that combines liquid-phase metal precursor deposition and vapor-phase organo-chalcogen delivery to leverage the advantages of both MOCVD and SS-CVD. Using our hybrid approach, we demonstrate WS$_2$ growth with tunable morphologies - from separated single-crystal domains to continuous monolayer films - on a variety of substrates, including sapphire, SiO$_2$, and Au. These WS$_2$ films exhibit narrow neutral exciton photoluminescence linewidths down to 33 meV and room-temperature mobility up to 34 - 36 cm$^2$V$^-$$^1$s$^-$$^1$). Through simple modifications to the liquid precursor composition, we demonstrate the growth of V-doped WS$_2$, MoxW$_1$$_-$$_x$S$_2$ alloys, and in-plane WS$_2$-MoS$_2$ heterostructures. This work presents an efficient approach for addressing a variety of TMDC synthesis needs on a laboratory scale. |
نوع الوثيقة: | Working Paper |
URL الوصول: | http://arxiv.org/abs/2403.03482 |
رقم الأكسشن: | edsarx.2403.03482 |
قاعدة البيانات: | arXiv |
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