The design, manufacture and characterisation of an inexpensive, temperature controlled vacuum chamber with millikelvin stability for electrical transport measurements at and near room temperature is reported. A commercially available Peltier device and high-precision temperature controller are used to actively heat and cool the sample space. The system was designed to minimise thermal fluctuations in spintronic and semiconductor transport measurements but the general principle is relevant to a wide range of electrical measurement applications. The main issues overcome are the mounting of a sample with a path of high thermal conductivity through to the Peltier device and the heat-sinking of said Peltier device inside of a vacuum. A copper slug is used as the mount for a sample and a large copper block is used as a thermal feedthrough before a passive heatsink is used to cool this block. The Peltier device provides 20 W of heating and cooling power achieving a maximum range of 30 K below and 40 K above the ambient temperature. The temperature stability is within 5 mK at all set points with even better performance above ambient temperature. A vacuum pressure of 1e-8 hPa is achievable. As a demonstration, we present experimental results from current-induced electrical switching of a CuMnAs thin film. Transport measurements with and without the Peltier control emphasise the importance of a constant temperature in these applications. The thermal lag between the sample space measurement and the sample itself is observed through magnetoresistance values measured during a temperature sweep.
