Coherent Modulation of Two-Dimensional Moir\'e States with On-Chip THz Waves

التفاصيل البيبلوغرافية
العنوان: Coherent Modulation of Two-Dimensional Moir\'e States with On-Chip THz Waves
المؤلفون: Li, Yiliu, Arsenault, Eric A., Yang, Birui, Wang, Xi, Park, Heonjoon, Guo, Yinjie, Taniguchi, Takashi, Watanabe, Kenji, Gamelin, Daniel, Hone, James C., Dean, Cory R., Maehrlein, Sebastian F., Xu, Xiaodong, Zhu, Xiaoyang
سنة النشر: 2024
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Strongly Correlated Electrons
الوصف: Van der Waals (vdW) structures of two-dimensional materials host a broad range of physical phenomena. New opportunities arise if different functional layers may be remotely modulated or coupled in a device structure. Here we demonstrate the in-situ coherent modulation of moir\'e excitons and correlated Mott insulators in transition metal dichalcogenide (TMD) homo- or hetero-bilayers with on-chip terahertz (THz) waves. Using common dual-gated device structures, each consisting of a TMD moir\'e bilayer sandwiched between two few-layer graphene (fl-Gr) gates with hexagonal boron nitride (h-BN) spacers, we launch coherent phonon wavepackets at ~0.4-1 THz from the fl-Gr gates by femtosecond laser excitation. The waves travel through the h-BN spacer, arrive at the TMD bilayer with precise timing, and coherently modulate the moir\'e excitons or the Mott states. These results demonstrate that the fl-Gr gates, often used for electrical control of the material properties, can serve as effective on-chip opto-elastic transducers to generate THz waves for the coherent control and vibrational entanglement of functional layers in commonly used moir\'e devices.
Comment: 11 pages, 4 figures, 12 pages SI. arXiv admin note: substantial text overlap with arXiv:2307.16563
نوع الوثيقة: Working Paper
URL الوصول: http://arxiv.org/abs/2403.17974
رقم الأكسشن: edsarx.2403.17974
قاعدة البيانات: arXiv