تقرير
Coherent Modulation of Two-Dimensional Moir\'e States with On-Chip THz Waves
العنوان: | Coherent Modulation of Two-Dimensional Moir\'e States with On-Chip THz Waves |
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المؤلفون: | Li, Yiliu, Arsenault, Eric A., Yang, Birui, Wang, Xi, Park, Heonjoon, Guo, Yinjie, Taniguchi, Takashi, Watanabe, Kenji, Gamelin, Daniel, Hone, James C., Dean, Cory R., Maehrlein, Sebastian F., Xu, Xiaodong, Zhu, Xiaoyang |
سنة النشر: | 2024 |
المجموعة: | Condensed Matter |
مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Strongly Correlated Electrons |
الوصف: | Van der Waals (vdW) structures of two-dimensional materials host a broad range of physical phenomena. New opportunities arise if different functional layers may be remotely modulated or coupled in a device structure. Here we demonstrate the in-situ coherent modulation of moir\'e excitons and correlated Mott insulators in transition metal dichalcogenide (TMD) homo- or hetero-bilayers with on-chip terahertz (THz) waves. Using common dual-gated device structures, each consisting of a TMD moir\'e bilayer sandwiched between two few-layer graphene (fl-Gr) gates with hexagonal boron nitride (h-BN) spacers, we launch coherent phonon wavepackets at ~0.4-1 THz from the fl-Gr gates by femtosecond laser excitation. The waves travel through the h-BN spacer, arrive at the TMD bilayer with precise timing, and coherently modulate the moir\'e excitons or the Mott states. These results demonstrate that the fl-Gr gates, often used for electrical control of the material properties, can serve as effective on-chip opto-elastic transducers to generate THz waves for the coherent control and vibrational entanglement of functional layers in commonly used moir\'e devices. Comment: 11 pages, 4 figures, 12 pages SI. arXiv admin note: substantial text overlap with arXiv:2307.16563 |
نوع الوثيقة: | Working Paper |
URL الوصول: | http://arxiv.org/abs/2403.17974 |
رقم الأكسشن: | edsarx.2403.17974 |
قاعدة البيانات: | arXiv |
الوصف غير متاح. |