تقرير
NO2 adsorption on GaN surface and its interaction with the yellow-luminescence-associated surface state
| العنوان: | NO2 adsorption on GaN surface and its interaction with the yellow-luminescence-associated surface state |
|---|---|
| المؤلفون: | Turkulets, Yury, Shauloff, Nitzan, Chaulker, Or Haim, Jelinek, Raz, Shalish, Ilan |
| سنة النشر: | 2024 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Physics - Applied Physics |
| الوصف: | Trapping of charge at surface states is a longstanding problem in GaN that hinders a full realization of its potential as a semiconductor for microelectronics. At least part of this charge originates in molecules adsorbed on the GaN surface. Multiple studies have addressed the adsorption of different substances, but the role of adsorbents in the charge-trapping mechanism remains unclear. Here, we show that the GaN surface selectively adsorbs nitrogen dioxide (NO2) existing in the air in trace amounts. NO2 appears to charge the yellow-luminescence-related surface state. Mild heat treatment in vacuum removes this surface charge, only to be re-absorbed on re-exposure to air. Selective exposure of vacuum-annealed GaN to NO2 reproduces a similar surface charge distribution, as does the exposure to air. Residual gas analysis of the gases desorbed during heat treatment in vacuum shows a large concentration of nitric oxide (NO) released from the surface. These observations suggest that NO2 is selectively adsorbed from the air, deleteriously affecting the electrical properties of air-exposed GaN. The trapping of free electrons as part of the NO2chemisorption process changes the surface charge density, resulting in a change in the surface band bending. Uncontrollable by nature, NO2 adsorption may significantly affect any GaN-based electronic device. However, as shown here, a rather mild heat treatment in vacuum restores the surface state occupancy of GaN to its intrinsic state. If attempted before passivation, this heat treatment may provide a possible solution to longstanding stability problems associated with surface charge trapping in GaN-based devices. |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2405.06471 |
| رقم الأكسشن: | edsarx.2405.06471 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |