تقرير
Extended T2 times of shallow implanted NV in chemically mechanically polished diamond
| العنوان: | Extended T2 times of shallow implanted NV in chemically mechanically polished diamond |
|---|---|
| المؤلفون: | Tyler, S., Newland, J., Hepworth, P., Wijesekara, A., Gullick, I. R., Markham, M. L., Newton, M. E., Green, B. L. |
| سنة النشر: | 2024 |
| المجموعة: | Condensed Matter Physics (Other) |
| مصطلحات موضوعية: | Physics - Applied Physics, Condensed Matter - Materials Science |
| الوصف: | Mechanical polishing of diamond is known to be detrimental to the spin lifetime and strain environment of near-surface defects. By utilising a chemical mechanical polishing (CMP) process, we demonstrate that we can achieve 13C-limited spin lifetimes of shallow implanted (<34 nm) NV centres in an industrially scalable process. We compare spin lifetimes (T2) of three diamonds processed with CMP with one processed by inductively-coupled plasma reactive ion etching (ICP-RIE), and observe an increased median T2 of 355 microseconds in the CMP-processed samples for 15NV centres implanted and annealed under identical conditions. Comment: 6 pages, 7 figures |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2405.11119 |
| رقم الأكسشن: | edsarx.2405.11119 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |