Semiconductor moir\'e systems, characterized by their periodic spatial light emission, unveil a new paradigm of active metasurfaces. Here, we show that ferroelectric moir\'e domains formed in a twisted hexagonal boron nitride (t-hBN) substrate can modulate light emission from an adjacent semiconductor MoSe$_2$ monolayer, enhancing its functionality as an active metasurface. The electrostatic potential at the surface of the t-hBN substrate provides a simple way to confine excitons in the MoSe$_2$ monolayer. The excitons confined within the domains and at the domain walls are spectrally separated due to a pronounced Stark shift. Moreover, the patterned light emission can be dynamically controlled by electrically gating the ferroelectric domains, introducing a novel functionality beyond conventional semiconductor moir\'e systems. Our findings chart an exciting pathway for integrating nanometer-scale moir\'e ferroelectric domains with various optically active functional layers, paving the way for advanced nanophotonic applications.
