تقرير
Extended spin relaxation times of optically addressed telecom defects in silicon carbide
| العنوان: | Extended spin relaxation times of optically addressed telecom defects in silicon carbide |
|---|---|
| المؤلفون: | Ahn, Jonghoon, Wicker, Christina, Bitner, Nolan, Solomon, Michael T., Tissot, Benedikt, Burkard, Guido, Dibos, Alan M., Zhang, Jiefei, Heremans, F. Joseph, Awschalom, David D. |
| سنة النشر: | 2024 |
| المجموعة: | Condensed Matter Quantum Physics |
| مصطلحات موضوعية: | Quantum Physics, Condensed Matter - Materials Science |
| الوصف: | Optically interfaced solid-state defects are promising candidates for quantum communication technologies. The ideal defect system would feature bright telecom emission, long-lived spin states, and a scalable material platform, simultaneously. Here, we employ one such system, vanadium (V4+) in silicon carbide (SiC), to establish a potential telecom spin-photon interface within a mature semiconductor host. This demonstration of efficient optical spin polarization and readout facilitates all optical measurements of temperature-dependent spin relaxation times (T1). With this technique, we lower the temperature from about 2K to 100 mK to observe a remarkable four-orders-of-magnitude increase in spin T1 from all measured sites, with site-specific values ranging from 57 ms to above 27 s. Furthermore, we identify the underlying relaxation mechanisms, which involve a two-phonon Orbach process, indicating the opportunity for strain-tuning to enable qubit operation at higher temperatures. These results position V4+ in SiC as a prime candidate for scalable quantum nodes in future quantum networks. Comment: 11 pages, 6 figures |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2405.16303 |
| رقم الأكسشن: | edsarx.2405.16303 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |