Non-Ioffe-Larkin composition rule and spinon-dictated electric transport in doped Mott insulators

التفاصيل البيبلوغرافية
العنوان: Non-Ioffe-Larkin composition rule and spinon-dictated electric transport in doped Mott insulators
المؤلفون: Chen, Chuan, Zhang, Jia-Xin, Song, Zhi-Jian, Weng, Zheng-Yu
سنة النشر: 2024
المجموعة: Condensed Matter
مصطلحات موضوعية: Condensed Matter - Strongly Correlated Electrons, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Superconductivity
الوصف: The electric resistivity is examined in the constrained Hilbert space of a doped Mott insulator, which is dictated by a non-Ioffe-Larkin composition rule due to the underlying mutual Chern-Simons topological gauge structure. In the low-temperature pseudogap phase, where holons remain condensed while spinons proliferate, the charge transport is governed by a chiral spinon excitation, comprising a bosonic spin-$1/2$ at the core of a supercurrent vortex. It leads to a vanishing resistivity with the "confinement" of the spinons in the superconducting phase but a low-$T$ divergence of the resistivity once the spinon confinement is disrupted by external magnetic fields. In the latter, the chiral spinons will generate a Hall number $n_H =$ doping concentration $\delta$ and a Nernst effect to signal an underlying long-range entanglement between the charge and spin degrees of freedom. Their presence is further reflected in thermodynamic quantities such as specific heat and spin susceptibility. Finally, in the high-temperature spin-disordered phase, it is shown that the holons exhibit a linear-$T$ resistivity by scattering with the spinons acting as free local moments, which generate randomized gauge fluxes as perceived by the charge degree of freedom.
Comment: 6+6 pages, 6 figures
نوع الوثيقة: Working Paper
URL الوصول: http://arxiv.org/abs/2406.15553
رقم الأكسشن: edsarx.2406.15553
قاعدة البيانات: arXiv