تقرير
Ferroelectric AlBN Films by Molecular Beam Epitaxy
| العنوان: | Ferroelectric AlBN Films by Molecular Beam Epitaxy |
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| المؤلفون: | Savant, Chandrashekhar, Gund, Ved, Nomoto, Kazuki, Maeda, Takuya, Jadhav, Shubham, Lee, Joongwon, Ramesh, Madhav, Kim, Eungkyun, Nguyen, Thai-Son, Chen, Yu-Hsin, Casamento, Joseph, Rana, Farhan, Lal, Amit, Huili, Xing, Jena, Debdeep |
| سنة النشر: | 2024 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Superconductivity |
| الوصف: | We report the properties of molecular beam epitaxy deposited AlBN thin films on a recently developed epitaxial nitride metal electrode Nb2N. While a control AlN thin film exhibits standard capacitive behavior, distinct ferroelectric switching is observed in the AlBN films with increasing Boron mole fraction. The measured remnant polarization Pr of 15 uC/cm2 and coercive field Ec of 1.45 MV/cm in these films are smaller than those recently reported on films deposited by sputtering, due to incomplete wake-up, limited by current leakage. Because AlBN preserves the ultrawide energy bandgap of AlN compared to other nitride hi-K dielectrics and ferroelectrics, and it can be epitaxially integrated with GaN and AlN semiconductors, its development will enable several opportunities for unique electronic, photonic, and memory devices. Comment: DOI: 10.1063/5.0181217 |
| نوع الوثيقة: | Working Paper |
| DOI: | 10.1063/5.0181217 |
| URL الوصول: | http://arxiv.org/abs/2407.09740 |
| رقم الأكسشن: | edsarx.2407.09740 |
| قاعدة البيانات: | arXiv |
| DOI: | 10.1063/5.0181217 |
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