تقرير
Pulsed Electroluminescence in a Dopant-free Gateable Semiconductor
| العنوان: | Pulsed Electroluminescence in a Dopant-free Gateable Semiconductor |
|---|---|
| المؤلفون: | Harrigan, S. R., Sfigakis, F., Tian, L., Sherlekar, N., Cunard, B., Tam, M. C., Kim, H. -S., Wasilewski, Z., Reimer, M. E., Baugh, J. |
| سنة النشر: | 2024 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics |
| الوصف: | We report on a stable form of pulsed electroluminescence in a dopant-free direct bandgap semiconductor heterostructure that we coin the tidal effect. Swapping an inducing gate voltage in an ambipolar field effect transistor allows incoming and outgoing carriers of opposite charge to meet and recombine radiatively. We develop a model to explain the carrier dynamics that underpins the frequency response of the pulsed electroluminesence intensity. Higher mobilities enable larger active emission areas than previous reports, as well as stable emission over long timescales. Comment: Main text: 5 pages, 4 figures. Supplementary: 7 pages, 5 figures |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2407.12714 |
| رقم الأكسشن: | edsarx.2407.12714 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |