تقرير
Distinct moir\'e trions in a twisted semiconductor homobilayer
| العنوان: | Distinct moir\'e trions in a twisted semiconductor homobilayer |
|---|---|
| المؤلفون: | Liu, Zhida, Wang, Haonan, Liu, Xiaohui, Ni, Yue, Gao, Frank, Arash, Saba, Kim, Dong Seob, Liu, Xiangcheng, Zeng, Yongxin, Quan, Jiamin, Huang, Di, Watanabe, Kenji, Taniguchi, Takashi, Baldini, Edoardo, MacDonald, Allan H., Shih, Chih-Kang, Yang, Li, Li, Xiaoqin |
| سنة النشر: | 2024 |
| المجموعة: | Condensed Matter |
| مصطلحات موضوعية: | Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Materials Science, Condensed Matter - Strongly Correlated Electrons |
| الوصف: | Many fascinating properties discovered in graphene and transition metal dichalcogenide (TMD) moir\'e superlattices originate from flat bands and enhanced many-body effects. Here, we discover new many-electron excited states in TMD homobilayers. As optical resonances evolve with twist angle and doping in MoSe$_2$ bilayers, a unique type of ``charge-transfer" trions is observed when gradual changes in atomic alignment between the layers occur. In real space, the optically excited electron-hole pair mostly resides in a different site from the doped hole in a moir\'e supercell. In momentum space, the electron-hole pair forms in the single-particle-band $K$-valley, while the hole occupies the $\Gamma$-valley. The rich internal structure of this trion resonance arises from the ultra-flatness of the first valence band and the distinct influence of moir\'e potential modulation on holes and excitons. Our findings open new routes to realizing photon-spin transduction or implementing moir\'e quantum simulators with independently tunable fermion and boson densities. Comment: 11 pages, 10 figures |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2407.17025 |
| رقم الأكسشن: | edsarx.2407.17025 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |