تقرير
Electrical control of topological 3Q state in an intercalated van der Waals antiferromagnet
| العنوان: | Electrical control of topological 3Q state in an intercalated van der Waals antiferromagnet |
|---|---|
| المؤلفون: | Kim, Junghyun, Zhang, Kaixuan, Park, Pyeongjae, Cho, Woonghee, Kim, Hyuncheol, Park, Je-Geun |
| سنة النشر: | 2024 |
| المجموعة: | Condensed Matter Physics (Other) Quantum Physics |
| مصطلحات موضوعية: | Condensed Matter - Materials Science, Condensed Matter - Mesoscale and Nanoscale Physics, Condensed Matter - Strongly Correlated Electrons, Physics - Applied Physics, Quantum Physics |
| الوصف: | Van der Waals (vdW) magnets have opened a new avenue of novel opportunities covering various interesting phases. Co1/3TaS2-an intercalated metallic vdW antiferromagnet-is one of the latest important additions to the growing list of materials due to its unique triple-Q (3Q) ground state possessing topological characteristics. Careful bulk characterisations have shown the ground state of CoxTaS2 to be a rare 3Q tetrahedral structure for x less than 1/3. The uniqueness of this ground state arises from the dense real-space Berry curvature due to scalar spin chirality, giving rise to a noticeable anomalous Hall effect. In this work, we demonstrate that we can control this topological phase via gating. Using three kinds of CoxTaS2 devices with different Co compositions, we have established that we can cover the whole 3Q topological phase with ionic gating. This work reports a rare demonstration of electrical gating control of layered antiferromagnetic metal. More importantly, our work constitutes one of the first examples of the electrical control of the scalar spin chirality using antiferromagnetic metal. Comment: 19 pages, 4 figures |
| نوع الوثيقة: | Working Paper |
| URL الوصول: | http://arxiv.org/abs/2409.02710 |
| رقم الأكسشن: | edsarx.2409.02710 |
| قاعدة البيانات: | arXiv |
| الوصف غير متاح. |