دورية أكاديمية
Ambi-polar anomalous Nernst effect in a magnetic topological insulator
| العنوان: | Ambi-polar anomalous Nernst effect in a magnetic topological insulator |
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| المؤلفون: | Minghua Guo, Yunbo Ou, Yong Xu, Yang Feng, Gaoyuan Jiang, Ke He, Xucun Ma, Qi-Kun Xue, Yayu Wang |
| المصدر: | New Journal of Physics, Vol 19, Iss 11, p 113009 (2017) |
| بيانات النشر: | IOP Publishing, 2017. |
| سنة النشر: | 2017 |
| المجموعة: | LCC:Science LCC:Physics |
| مصطلحات موضوعية: | topological insulator, anomalous Hall effect, anomalous Nernst effect, Science, Physics, QC1-999 |
| الوصف: | We report electromagnetic and thermomagnetic transport studies on a magnetic topological insulator thin film Cr _0.15 (Bi _0.1 Sb _0.9 ) _1.85 Te _3 grown by molecular beam epitaxy. The temperature and gate voltage dependence of the anomalous Hall effect exhibits the typical behavior of a quantum anomalous Hall insulator. The anomalous Nernst effect (ANE) shows a sign reversal when the Fermi level is tuned across the charge neutrality point of the surface Dirac cone. We show that the ambi-polar behavior of the ANE can be explained by the semiclassical Mott relation, in conjunction with the ambi-polar Dirac band structure. |
| نوع الوثيقة: | article |
| وصف الملف: | electronic resource |
| اللغة: | English |
| تدمد: | 1367-2630 |
| Relation: | https://doaj.org/toc/1367-2630 |
| DOI: | 10.1088/1367-2630/aa8b91 |
| URL الوصول: | https://doaj.org/article/01547f144c9c41ae8e29a51eab93f877 |
| رقم الأكسشن: | edsdoj.01547f144c9c41ae8e29a51eab93f877 |
| قاعدة البيانات: | Directory of Open Access Journals |
Full Text Finder | تدمد: | 13672630 |
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| DOI: | 10.1088/1367-2630/aa8b91 |