دورية أكاديمية

A Stepwise Rate-Compatible LDPC and Parity Management in NAND Flash Memory-Based Storage Devices

التفاصيل البيبلوغرافية
العنوان: A Stepwise Rate-Compatible LDPC and Parity Management in NAND Flash Memory-Based Storage Devices
المؤلفون: Seung-Ho Lim, Jae-Bin Lee, Geon-Myeong Kim, Woo Hyun Ahn
المصدر: IEEE Access, Vol 8, Pp 162491-162506 (2020)
بيانات النشر: IEEE, 2020.
سنة النشر: 2020
المجموعة: LCC:Electrical engineering. Electronics. Nuclear engineering
مصطلحات موضوعية: NAND flash memory, flash storage, P/E cycle, RC LDPC, PCHK, parity, Electrical engineering. Electronics. Nuclear engineering, TK1-9971
الوصف: The storage capacity of the NAND flash memory has increased rapidly, and accordingly, the error rate for data writing and reading to the flash memory cell has also escalated. Error-correcting code (ECC) modules, such as low-density parity-check (LDPC), have been applied to flash controllers for error recovery. However, since the error rate increases rapidly, compared to the aging factor and program/erase (P/E) cycle, fixed ECCs and parities are inappropriate methods for resolving this proliferating error, according to the P/E cycle. Therefore, the design of a dynamic ECC scheme and a proper ECC parity management system to increase the lifespan of flash memory storage devices remains in great demand. Herein, an LDPC encoding and decoding scheme is designed to obtain a step-by-step code rate according to the P/E cycle by applying a stepwise rate-compatible LDPC. In addition, an ECC parity management scheme for the increasingly excessive stage-wise ECC is proposed to reduce management and read/write operational overheads. The ECC management scheme also includes the ECC cache system. The proposed LDPC, as well as its management system, will improve the recovery ability of the NAND flash storage device according to the P/E cycle, while it can reduce system read and write overheads due to additional parity data growth.
نوع الوثيقة: article
وصف الملف: electronic resource
اللغة: English
تدمد: 2169-3536
Relation: https://ieeexplore.ieee.org/document/9186119/; https://doaj.org/toc/2169-3536
DOI: 10.1109/ACCESS.2020.3021498
URL الوصول: https://doaj.org/article/d073617139cd481b9347c7272d78d5de
رقم الأكسشن: edsdoj.073617139cd481b9347c7272d78d5de
قاعدة البيانات: Directory of Open Access Journals
الوصف
تدمد:21693536
DOI:10.1109/ACCESS.2020.3021498